m o s f e t n-channel 50-v(d-s) mosfet page 1 rev :a mechanical data -case: sot -23, molded plastic. -t erminals: solderable per mil-std-750, method 2026. BSS138-G qw -btr40 comchip t echnology co., l td. features -rugged and reliable. -high density cell design for extremely low r ds(on). maximum ratings (at t a=25c unless otherwise noted) drain-source voltage continuous gate-source voltage continuous drain current power dissipation operating temperature storage temperature units symbol parameter v ds v gs i d p d r ja t j t stg v alue 50 20 0.22 0.35 357 150 -55 to +150 v v a w c/w c c thermal resistance from junction to ambient circuit diagram g d s company reserves the right to improve product design , functions and reliability without notice. 1 : gate 2 : source 3 : drain d i m e n s i o n s i n i n c h e s a n d ( m i l l i m e t e r ) s o t - 2 3 3 1 2 0.1 18(3.00) 0.1 10(2.80) 0.055(1.40) 0.047(1.20) 0.079(2.00) 0.071(1.80) 0.041(1.05) 0.035(0.90) 0.020(0.50) 0.012(0.30) 0.006(0.15) 0.003(0.08) 0.100(2.55) 0.089(2.25) 0.004(0.10) max 0.012(0.30) 0.020(0.50) rohs device
m o s f e t page 2 rev :a qw -btr40 comchip t echnology co., l td. electrical characteristics ( t a =25c unless otherwise noted) symbol parameter conditions t yp max unit v (br)dss i gss i dss v gs(th) r ds(on) g fs c iss c oss c rss t d(on) t r v gs =0v , i d =250 a v ds =0v , v gs =20v v ds =50v , v gs =0v v ds = , v gs i d =1ma v gs =10v , i d =0.22a v gs =4.5v , i d =0.22a v ds =10v , i d =0.22a v ds =25v , v gs =0v , f=1mhz v dd =30v , v ds =10v , i d =0.29a, r gen =6 min drain-source breakdown voltage gate-body leakage zero gate voltage drain current gate-threshold voltage (note 1) forward transconductance (note 1) input capacitance output capacitance reverse transfer capacitance t urn-on delay time (note 1,2) rise time (note 1,2) 50 0.8 0.12 v 100 0.5 3.5 6 27 13 6 5 18 v na a v s pf ns 1.5 off characteristics dynamic characteristics (note 2) switching characteristics t urn-of f delay time (note 1,2) t d(off) 36 fall time (note 1,2) t f 14 i dss v ds =30v , v gs =0v 100 n a v sd body diode forward voltage (note 1) 1.4 drain-source body diode characteristics v i s =0.44a, v gs =0v note: 1. pulse test ; pulse width 300s, duty cycle 2% 2. these parameters have no way to verify . on characteristics static drain-source on-resistance (note 1) company reserves the right to improve product design , functions and reliability without notice.
m o s f e t page 3 rev :a qw -btr40 comchip t echnology co., l td. ra ting and characteristic cur ves ( ) BSS138-G drain current, i d (a) fig.3 - r ds(on) i d o n - r e s i s t a n c e , r d s ( o n ) ( ) gate to source v oltage, v gs (v) fig.4 - r ds(on) v gs o n - r e s i s t a n c e , r d s ( o n ) ( ) drain to source v oltage , v ds (v) fig.1 - output characteristics 0 d r a i n c u r r e n t , i d ( a ) 2.0 0 4 5 1.0 1 2 3 0.5 1.5 gate to source v oltage, v gs (v) 4 2 1 0 fig.2 - t ransfer characteristics 0 0.4 0.6 d r a i n c u r r e n t , i d ( a ) 0.1 3 0.0 1.0 3.0 0.1 0.2 1.0 0.4 0.8 0.6 1.5 0.5 2.0 source to drain v oltage, v sd (v) 1.4 0.6 0.4 0.2 fig.5 - i s v sd 0.01 0.1 1 s o u r c e c u r r e n t , i s ( a ) 0.001 0.8 t a =25c pulsed v gs =10v 5v 4v 3v 2v t a =25c pulsed 0.2 0.3 0.5 2.5 v gs = 4.5v v gs = 10v v gs = 6v t a =25c pulsed 4 2 6 0 0 4 6 1 8 2 3 5 10 t a =25c pulsed i d = 500ma 1.2 1.0 t a =25c pulsed
reel t aping specification b c d d d 2 d 1 s o t - 2 3 s y m b o l a ( m m ) ( i n c h ) 2 . 1 4 2 0 . 0 3 9 4 . 0 0 0 . 1 0 1 . 5 0 0 . 1 0 5 4 . 4 0 1 . 0 0 1 3 . 0 0 1 . 0 0 4 . 0 0 0 . 1 0 2 . 0 0 0 . 1 0 1 7 8 2 . 0 0 0 . 0 5 9 0 . 0 0 4 7 . 0 0 8 0 . 0 7 9 0 . 5 1 2 0 . 0 3 9 s y m b o l ( m m ) ( i n c h ) 0 . 0 . 0 0 4 1 5 7 0 . 1 5 7 0 . 0 0 4 0 . 0 7 9 0 . 0 0 4 e f p p 0 p 1 w w 1 1 . 7 5 0 . 1 0 0 . 0 6 9 0 . 0 0 4 3 . 5 0 0 . 1 0 0 . 1 3 8 0 . 0 0 4 s o t - 2 3 3 . 1 5 0 . 1 0 0 . 1 2 4 0 . 0 0 4 2 . 7 7 0 . 1 0 0 . 1 0 9 0 . 0 0 4 1 . 2 2 0 . 1 0 0 . 0 4 8 0 . 0 0 4 1 2 . 3 0 1 . 0 0 0 . 4 8 4 0 . 0 3 9 8 . 0 0 0 . 3 0 / + C 0 . 1 0 0 . 3 1 5 0 . 0 1 2 / + C 0 . 0 0 4 d f e b p 1 p 0 o 1 2 0 d 1 d 2 w 1 p d a w t c m o s f e t page 4 rev :a qw -btr40 comchip t echnology co., l td.
m o s f e t page 5 rev :a qw -btr40 comchip t echnology co., l td. part number BSS138-G marking code ss marking code xx 3 1 2 xx = product type marking code suggested p ad layout size (inch) 0.031 (mm) 0.80 1.90 2.02 0.075 0.080 sot -23 2.82 0.1 1 1 a b c d a c b d standard packaging c a s e t y p e s o t - 2 3 3 , 0 0 0 r e e l ( p c s ) reel size (inch) 7 r e e l p a c k
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